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Ono, Ayato; Takayanagi, Tomohiro; Fuwa, Yasuhiro; Shinozaki, Shinichi; Ueno, Tomoaki*; Horino, Koki*; Sugita, Moe; Yamamoto, Kazami; Kinsho, Michikazu; Ikoma, Naoya*; et al.
Proceedings of 20th Annual Meeting of Particle Accelerator Society of Japan (Internet), p.871 - 876, 2023/11
In J-PARC, an ignitron is used for the crowbar device of the klystron power supply to excite the RF acceleration voltage in a Linac cavity. Mercury, that is used in the ignitron, would be prohibition of use in the future due to environmental protection. Therefore, we designed a semiconductor crowbar switch for short-circuit protection of klystron using a MOS gate thyristor. We have manufactured an oval-type board module that realizes an operating output of 3kV, 40kA, and 50us per board. Because a high voltage of 120 kV is applied on each board, we adopted a self-power supply method to supply a electricity for the control system. This method can create the electricity from a high-voltage DCDC converter. We confirmed the operating performance on a 1/2 scale (60 kV, 40 kA) of the voltage in the existing ignitron system (120 kV, 40 kA). We also studied a test circuit in a higher voltage range of more than 90 kV. Our latest result is well promising for an alternative system of ignitron.
Ono, Ayato; Takayanagi, Tomohiro; Fuwa, Yasuhiro; Shinozaki, Shinichi; Ueno, Tomoaki*; Horino, Koki*; Sugita, Moe; Yamamoto, Kazami; Kinsho, Michikazu; Ikoma, Naoya*; et al.
Proceedings of 19th Annual Meeting of Particle Accelerator Society of Japan (Internet), p.395 - 399, 2023/01
At J-PARC, an ignitron is used for the crowbar device of the klystron power supply for high-frequency acceleration of a linear accelerator. Ignitron uses mercury, which is of limited use worldwide, and is expected to be discontinued in the future. Therefore, we designed a semiconductor crowbar switch for short-circuit protection of klystron using a MOS gate thyristor. We have manufactured an oval-type board module that realizes an operating output of 3 kV, 40 kA, and 50 
s per board. For the control power supply to each board module assuming a high voltage of 120 kV, we adopted a self-power supply method that creates a control power supply with a high-voltage DCDC converter from the voltage shared and charged by each board module. It was possible to confirm the operating performance on a 1/2 scale (60 kV, 40 kA) against the voltage of the existing equipment (120 kV, 40 kA) by connecting twenty oval board modules in series. The output test result will be reported.
Ono, Ayato; Takayanagi, Tomohiro; Ueno, Tomoaki*; Horino, Koki*; Yamamoto, Kazami; Kinsho, Michikazu
Proceedings of 18th Annual Meeting of Particle Accelerator Society of Japan (Internet), p.831 - 834, 2021/10
The Ignitron is used in the clover device of the klystron power supply for RF acceleration in the J-PARC LINAC. However, this ignitron uses mercury, the use of which is restricted worldwide, and its production is expected to be discontinued in the future. Therefore, we designed a semiconductor clover switch for short-circuit protection of klystron using a MOS gate thyristor. We have manufactured an oval-type board module that realizes an operating output of 3 kV, 40 kA, and 50 s per board. For the control power supply to each board module assuming a high voltage of 120 kV, we adopted a self-power supply method that creates a control power supply with a high-voltage DCDC converter from the voltage shared and charged by each board module. It was possible to confirm the operating performance on a 1/4 scale (30 kV, 40 kA) against the voltage of the existing equipment (120 kV, 40 kA) by connecting ten oval board modules in series. The output test result will be reported.
Ono, Ayato; Takayanagi, Tomohiro; Ueno, Tomoaki*; Horino, Koki*; Yamamoto, Kazami; Kinsho, Michikazu
Proceedings of 17th Annual Meeting of Particle Accelerator Society of Japan (Internet), p.590 - 593, 2020/09
At J-PARC, an ignitron is used for the clover device of the klystron power supply for high-frequency acceleration of a linear accelerator. Ignitron uses mercury, which is of limited use worldwide, and is expected to be discontinued in the future. Therefore, a semiconductor switch for ignitron substitution using a MOS gate thyristor is designed. In order to be used as a crowbar device, a switch capable of resisting an operating output of 120 kV, 40 kA, 50 us is required. We have realized an oval type substrate module that achieves an operating output of 3 kV, 40 kA, 50 us per substrate. It was possible to confirm the operating performance on a 1/10 scale (12 kV, 40 kA) against the voltage of the existing equipment (120 kV, 40 kA) by connecting four oval board modules in series. The output test result will be reported.
Kamiya, Tomihiro; Hirao, Toshio; Kobayashi, Yasuhiko
Nuclear Instruments and Methods in Physics Research B, 219-220, p.1010 - 1014, 2004/06
Times Cited Count：8 Percentile：48.81(Instruments & Instrumentation)no abstracts in English
Matsuda, Hideo*; Omura, Ichiro*; Sakiyama, Yoko*; Urano, Satoshi*; Iesaka, Susumu*; Ohashi, Hiromichi*; Hirao, Toshio; Abe, Hiroshi; Ito, Hisayoshi; Mori, Hidenobu; et al.
JAERI-Review 2002-035, TIARA Annual Report 2001, p.11 - 13, 2002/11
no abstracts in English
Kamiya, Tomihiro
Hoshasen Kagaku, 2000(69), p.32 - 36, 2000/03
no abstracts in English
Hirao, Toshio; Nashiyama, Isamu; Kamiya, Tomihiro; Suda, Tamotsu*
JAERI-Conf 97-003, p.249 - 252, 1997/03
no abstracts in English
Nashiyama, Isamu; Hirao, Toshio; Ito, Hisayoshi; Oshima, Takeshi
JAERI-Conf 97-003, p.22 - 25, 1997/03
no abstracts in English
Fukushima, Mineo; ; ; ;
PNC TN8410 93-192, 129 Pages, 1993/05
There is much data available from irradiation tests on various electrical devices and materials simulating conditions found in nuclear plants. This data is very helpful for selecting the components to be used in unclear plant and for equipment design. A data base has been designed to provide easy acquisition and utilization of the test data. Basic items (target user, scope for collecting data, etc.), qualifications (purpose, function, etc.) and input data sheets have been considered in the design of the data base architecture. A prototype data base system architecture has been designed based on these considerations. After improvement and debugging of the prototype system, irradiation data from tests on semiconductors and polymers were entered into the data base using the data sheets. The data base architecture is designed to be simple so that beginners can easily use it. This system has about 1000 electronic equipments data and about 500 polymers data as of July, 1993. Radiation resistance of electronic equipment is now being evaluated using the data base system. Further improvements and rssolution of problems will be made so the data base system can provide optimum support to the design of equipment used in radiation anvironments.
Kamiya, Tomihiro; Yuto, Hidenori; Tanaka, Ryuichi
Dai-5-Kai Tandemu Kasokuki Oyobi Sono Shuhen Gijutsu No Kenkyukai Hokokushu, p.116 - 119, 1992/07
no abstracts in English
Kamiya, Tomihiro; *; Tanaka, Ryuichi
Dai-3-Kai Ryushisen No Sentanteki Oyo Gijutsu Ni Kansuru Shimpojiumu, p.453 - 456, 1992/00
no abstracts in English
Kamiya, Tomihiro; *; Minehara, Eisuke; Tanaka, Ryuichi; Odomari, Iwao*
Nuclear Instruments and Methods in Physics Research B, 64, p.362 - 366, 1992/00
Times Cited Count：30 Percentile：91.05(Instruments & Instrumentation)no abstracts in English
M.Koh*; *; *; *; *; *; *; Kamiya, Tomihiro; *; Minehara, Eisuke; et al.
Proceedings of International Workshop on Radiation Effects of Semiconductor Devices for Spasce Application, p.105 - 111, 1992/00
no abstracts in English
Kamiya, Tomihiro; *; Tanaka, Ryuichi
Proceedings of the International Workshop on Radiation Effects of Semiconductor Devices for Space Application, p.112 - 117, 1992/00
no abstracts in English
Morita, Yosuke
Hoshasen To Sangyo, (52), p.40 - 42, 1991/12
no abstracts in English
Mori, Hiroko*; Uemura, Taiki*; Matsuyama, Hideya*; Abe, Shinichiro; Watanabe, Yukinobu*
no journal, ,
Terrestrial neutron-induced soft error has been recognized as a serious reliability problem for microelectronics. An irradiation testing with spallation neutron beam is suitable for evaluation of terrestrial neutron induced soft error rate (SER). The SER measured in neutron irradiation facility is necessary to compensate since neutron beam spectra obtained each facility is different from terrestrial neutron spectrum reported by JEDEC. We provide SER ratio between JEDEC's and facility's as a function of critical charge so as to compensate SER in various devices. The SER ratio was derived from single event upset (SEU) cross-section calculated by a multi-scale Monte Carlo simulation code system PHYSERD (PHits-HYenexss integrated code System for Effects of Radiation on Device). We performed SER testing using spallation neutron beam at three facilities. The deviation among measured SERs compensated by the SER ratio is less than 5%.
Sato, Shinichiro; Schmieder, K.*; Hubbard, S.*; Forbes, D.*; Warner, J.*; Oshima, Takeshi; Walters, R.*
no journal, ,
GaAs pn-junction diodes with embedded InAs quantum dots (QDs) are irradiated with high energy protons and the generated deep level traps are investigated using Deep Level Transient Spectroscopy (DLTS). The results are compared to GaAs pn-junction diodes without QDs in order to identify the origin of deep level traps. In addition, the fluence dependence of trap density is investigated and it is shown that traps induced by irradiation increase in proportion to the fluence whereas EL2 trap, which appears before irradiation, is not affected by irradiation.
Okada, Hiroshi*; Abderrahmane, A.*; Adarsh, S.*; Wakahara, Akihiro*; Sato, Shinichiro; Oshima, Takeshi
no journal, ,
no abstracts in English
Matsuba, Hirotaka*; Watanabe, Yukinobu*; Abe, Shinichiro
no journal, ,
Stored data on semiconductor device is flipped by incident radiation (so-called Single Event Upset, SEU), and temporal malfunction (so-called soft error) is caused on microelectronics. Recently, the effect of terrestrial muons to soft error is suggested because devices become small and sensitive to radiation. Soft errors can be caused not only by muon direct ionization but also by secondary ions generated by negative muon capture reaction. The analysis of soft error rate (SER) in the 65, 45, 32 and 25-nm technology NMOSFET is performed based on the single sensitive volume model using PHITS. It is clarified that the terrestrial muon-induced SER shows a decreasing trend which is similarly to terrestrial neutron-induced SER. From the detailed analysis for 25-nm technology NMOSFET, it is clarified that muon direct ionization and secondary ions generated by negative muon capture affect on soft error.
